SPP06N60C3 coolmos tm power transistor features ? new revolutionary high voltage technology ? ultra low gate charge ? periodic avalanche rated ? high peak current capability ? ultra low effective capacitances ? extreme d v /d t rated ? improved transconductance maximum ratings, at t j =25 c, unless otherwise specified parameter symbol conditions unit continuous drain current i d t c =25 c a t c =100 c pulsed drain current 1) i d,pulse t c =25 c avalanche energy, single pulse e as i d =3.1 a, v dd =50 v 200 mj avalanche energy, repetitive t ar 1),2) e ar i d =6.2 a, v dd =50 v avalanche current, repetitive t ar 1) i ar a drain source voltage slope d v /d t i d =6.2 a, v ds =480 v, t j =125 c v/ns gate source voltage v gs static v v gs ac ( f >1 hz) power dissipation p tot t c =25 c w operating and storage temperature t j , t stg c 20 30 74 -55 ... 150 0.5 6.2 50 value 6.2 3.9 18.6 v ds @ t j,max 650 v r ds(on),max 0.75 ? i d 6.2 a product summary p-to220-3-1 type package ordering code marking SPP06N60C3 p-to220-3-1 q67040-s4629 06n60c3 rev. 1.0 page 1 2004-04-27
SPP06N60C3 parameter symbol conditions unit min. typ. max. thermal characteristics thermal resistance, junction - case r thjc - - 1.7 k/w r thja leaded - - 62 r thja smd version, device on pcb, minimal footprint --62 smd version, device on pcb, 6 cm 2 cooling area 3) -35- soldering temperature 4) t sold 1.6 mm (0.063 in.) from case for 10 s - - 260 c electrical characteristics, at t j =25 c, unless otherwise specified static characteristics drain-source breakdown voltage v (br)dss v gs =0 v, i d =250 a 600 - - v avalanche breakdown voltage v (br)ds v gs =0 v, i d =6.2 a - 700 - gate threshold voltage v gs(th) v ds = v gs , i d =0.26 ma 2.1 3 3.9 zero gate voltage drain current i dss v ds =600 v, v gs =0 v, t j =25 c - 0.1 1 a v ds =600 v, v gs =0 v, t j =150 c - - 100 gate-source leakage current i gss v gs =20 v, v ds =0 v - - 100 na drain-source on-state resistance r ds(on) v gs =10 v, i d =3.9 a, t j =25 c - 0.68 0.75 ? v gs =10 v, i d =3.9 a, t j =150 c - 1.82 - gate resistance r g f =1 mhz, open drain -1- transconductance g fs | v ds |>2| i d | r ds(on)max , i d =3.9 a - 5.6 - s values thermal resistance, junction - ambient rev. 1.0 page 2 2004-04-27
SPP06N60C3 parameter symbol conditions unit min. typ. max. d y namic characteristics input capacitance c iss - 620 - pf output capacitance c oss - 200 - reverse transfer capacitance c rss -17- effective output capacitance, energy related 5) c o(er) -28- effective output capacitance, time related 6) c o(tr) -47- turn-on delay time t d(on) -7-ns rise time t r -12- turn-off delay time t d(off) -52- fall time t f -10- gate charge characteristics gate to source charge q gs - 3.3 - nc gate to drain charge q gd -12- gate charge total q g -2431 gate plateau voltage v plateau - 5.5 - v 6) c o(tr) is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss. 5) c o(er) is a fixed capacitance that gives the same stored energy as c oss while v ds is rising from 0 to 80% v dss. 4) soldering temperature for to263: 220 c, reflow values v gs =0 v, v ds =25 v, f =1 mhz v dd =480 v, v gs =10 v, i d =6.2 a, r g =12 ? v dd =480 v, i d =6.2 a, v gs =0 to 10 v v gs =0 v, v ds =0 v to 480 v 1) pulse width limited by maximum temperature t j,max only 2) repetitive avalanche causes additional power losses that can be calculated as p av = e ar * f. 3) device on 40 mm x 40 mm x 1.5 mm epoxy pcb fr4 with 6 cm 2 (one layer, 70 m thick) copper area for drain connection. pcb is vertical in still air. rev. 1.0 page 3 2004-04-27
SPP06N60C3 parameter symbol conditions unit min. typ. max. reverse diode diode continuous forward current i s - - 6.2 a diode pulse current i s,pulse - - 18.6 diode forward voltage v sd v gs =0 v, i f =6.2 a, t j =25 c - 0.97 1.2 v reverse recovery time t rr - 400 - ns reverse recovery charge q rr - 3.5 - c peak reverse recovery current i rrm -25-a t y pical transient thermal characteristics v r =480 v, i f = i s , d i f /d t =100 a/s t c =25 c values 7) c th6 models the additional heat capacitance of the package in case of non-ideal cooling. it is not needed if r thca =0 k/w. symbol value unit symbol value unit typ. typ. r th1 0.0325 k/w c th1 0.0000502 ws/k r th2 0.0448 c th2 0.000303 r th3 0.251 c th3 0.000428 r th4 0.31 c th4 0.00243 r th5 0.301 c th5 0.00526 c th6 1.09 7) rev. 1.0 page 4 2004-04-27
SPP06N60C3 1 power dissipation 2 safe operating area p tot =f( t c ) i d =f( v ds ); t c =25 c; d =0 parameter: t p 3 max. transient thermal impedance 4 typ. output characteristics i d =f( v ds ); t j =25 c i d =f( v ds ); t j =25 c parameter: d=t p / t parameter: v gs 0 20 40 60 80 0 40 80 120 160 t c [c] p tot [w] 1 s 10 s 100 s 1 ms 10 ms dc 10 3 10 2 10 1 10 0 10 2 10 1 10 0 10 -1 10 -2 v ds [v] i d [a] limited by on-state resistance single pulse 0.01 0.02 0.05 0.1 0.2 0.5 10 0 10 -1 10 -2 10 -3 10 -4 10 -5 10 -6 10 1 10 0 10 -1 10 -2 t p [s] z thjc [k/w] 4 v 4.5 v 5 v 5.5 v 6 v 6.5 v 7 v 20 v 0 4 8 12 16 20 0 5 10 15 20 v ds [v] i d [a] rev. 1.0 page 5 2004-04-27
SPP06N60C3 5 typ. output characteristics 6 typ. drain-source on-state resistance i d =f( v ds ); t j =150 c r ds(on) =f( i d ); t j =150 c parameter: v gs parameter: v gs 7 drain-source on-state resistance 8 typ. transfer characteristics r ds(on) =f( t j ); i d =3.9 a; v gs =10 v i d =f( v gs ); | v ds |>2| i d | r ds(on)max parameter: t j 4 v 4.5 v 5 v 5.5 v 6 v 20 v 0 1 2 3 4 0246810 i d [a] r ds(on) [ ? ] typ 98 % 0 0.4 0.8 1.2 1.6 2 -60 -20 20 60 100 140 180 t j [c] r ds(on) [ ? ] 25 c 150 c 0 5 10 15 20 25 0246810 v gs [v] i d [a] 4 v 4.5 v 5 v 5.5 v 6 v 6.5 v 7 v 20 v 0 2 4 6 8 0 5 10 15 20 v ds [v] i d [a] rev. 1.0 page 6 2004-04-27
SPP06N60C3 9 typ. gate charge 10 forward characteristics of reverse diode v gs =f( q gate ); i d =6.2 a pulsed i f =f( v sd ) parameter: v dd parameter: t j 11 avalanche soa 12 avalanche energy i ar =f( t ar ) e as =f( t j ); i d =3.1 a; v dd =50 v parameter: t j(start) 120 v 480 v 0 2 4 6 8 10 12 0102030 q gate [nc] v gs [v] 0 50 100 150 200 250 20 60 100 140 180 t j [c] e as [mj] 25 c 150 c 25 c, 98% 150 c, 98% 10 2 10 1 10 0 10 -1 0 0.5 1 1.5 2 2.5 v sd [v] i f [a] 125 c 25 c 10 3 10 2 10 1 10 0 10 -1 10 -2 10 -3 0 2 4 6 8 t ar [s] i av [a] rev. 1.0 page 7 2004-04-27
SPP06N60C3 13 drain-source breakdown voltage 14 typ. capacitances v br(dss) =f( t j ); i d =0.25 ma c =f( v ds ); v gs =0 v; f =1 mhz 15 typ. c oss stored energy e oss = f (v ds ) 540 580 620 660 700 -60 -20 20 60 100 140 180 t j [c] v br(dss) [v] ciss coss crss 10 4 10 3 10 2 10 1 10 0 0 100 200 300 400 500 v ds [v] c [pf] 0 1 2 3 4 5 0 100 200 300 400 500 600 v ds [v] e oss [j] rev. 1.0 page 8 2004-04-27
SPP06N60C3 definition of diode switching characteristics p-to220-3-1: outline dimensions in mm rev. 1.0 page 9 2004-04-27
SPP06N60C3 published by infineon technologies ag bereich kommunikation st.-martin-stra?e 53 d-81541 mnchen ? infineon technologies ag 1999 all rights reserved. attention please! the information herein is given to describe certain components and shall not be considered as warranted characteristics. terms of delivery and rights to technical change reserved. we hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. infineon technologies is an approved cecc manufacturer. information for further information on technology, delivery terms and conditions and prices, please contact your nearest infineon technologies office in germany or our infineon technologies representatives worldwide (see address list). warnings due to technical requirements, components may contain dangerous substances. for information on the types in question, please contact your nearest infineon technologies office. infineon technologies' components may only be used in life-support devices or systems with the expressed written approval of infineon technologies if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered. rev. 1.0 page 10 2004-04-27
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